sot23 npn silicon planar medium power transistors issue 3 - august 1995 partmarking details ? BCW65a ? ea BCW65ar ? 4v BCW65b ? eb BCW65br ? 5v BCW65c ? ec BCW65cr ? 6v bcw66f ? ef bcw66fr ? 7p bcw66g ? eg bcw66gr ? 5t bcw66h ? eh bcw66hr ? 7m complementary types ? BCW65 ? bcw67 bcw66 ? bcw68 absolute maximum ratings. parameter symbol BCW65 bcw66 unit collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 32 45 v emitter-base voltage v ebo 5v continuous collector current i c 800 ma peak collector current(10ms) i cm 1000 ma base current i b 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c BCW65 bcw66 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage BCW65 bcw66 v (br)ceo 32 45 vi ceo =10ma i ceo =10ma BCW65 bcw66 v (br)ces 60 75 v i c =10 m a i c =10 m a emitter-base breakdown voltage v (br)ebo 5v i ebo =10 m a collector-emitter cut-off current BCW65 bcw66 i ces 20 20 20 20 na m a na m a v ces = 32v v ces = 32v , t amb =150 o c v ces = 45v v ces = 45v ,t amb =150 o c emitter-base cut-off current i ebo 20 na v ebo =4v collector-emitter saturation voltage v ce(sat) 0.3 0.7 v v i c =100ma, i b = 10ma i c = 500ma, i b =50ma* base-emitter saturation voltage v be(sat) 2 v i c =500ma, i b =50ma* static forward current transfer BCW65a bcw66f h fe 35 75 100 35 160 250 i c =100 m a, v ce =10v i c = 10ma, v ce = 1v i c =100ma, v ce = 1v* i c =500ma, v ce = 2v* BCW65b bcw66g h fe 50 110 160 60 250 400 i c =100 m a, v ce =10v i c = 10ma, v ce = 1v i c =100ma, v ce = 1v* i c =500ma, v ce = 2v* BCW65c bcw66h h fe 80 180 250 100 350 630 i c =100 m a, v ce =10v i c = 10ma, v ce = 1v i c =100ma, v ce = 1v* i c =500ma, v ce = 2v* transition frequency f t 100 mhz i c =20ma, v ce =10v f = 100mhz collector-base capacitance c cbo 8 12pfv cbo =10v, f =1mhz emitter-base capacitance c ebo 80 pf v ebo =0.5v, f =1mhz noise figure n 2 10 db i c = 0.2ma, v ce = 5v r g =1k w switching times: turn-on time turn-off time t on t off 100 400 ns ns i c =150ma i b1 =- i b2 =15ma r l =150 w spice parameter data is available upon request for this device *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% c b e sot23 BCW65 bcw66 3 - 28 3 - 27
sot23 npn silicon planar medium power transistors issue 3 - august 1995 partmarking details ? BCW65a ? ea BCW65ar ? 4v BCW65b ? eb BCW65br ? 5v BCW65c ? ec BCW65cr ? 6v bcw66f ? ef bcw66fr ? 7p bcw66g ? eg bcw66gr ? 5t bcw66h ? eh bcw66hr ? 7m complementary types ? BCW65 ? bcw67 bcw66 ? bcw68 absolute maximum ratings. parameter symbol BCW65 bcw66 unit collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 32 45 v emitter-base voltage v ebo 5v continuous collector current i c 800 ma peak collector current(10ms) i cm 1000 ma base current i b 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c BCW65 bcw66 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage BCW65 bcw66 v (br)ceo 32 45 vi ceo =10ma i ceo =10ma BCW65 bcw66 v (br)ces 60 75 v i c =10 m a i c =10 m a emitter-base breakdown voltage v (br)ebo 5v i ebo =10 m a collector-emitter cut-off current BCW65 bcw66 i ces 20 20 20 20 na m a na m a v ces = 32v v ces = 32v , t amb =150 o c v ces = 45v v ces = 45v ,t amb =150 o c emitter-base cut-off current i ebo 20 na v ebo =4v collector-emitter saturation voltage v ce(sat) 0.3 0.7 v v i c =100ma, i b = 10ma i c = 500ma, i b =50ma* base-emitter saturation voltage v be(sat) 2 v i c =500ma, i b =50ma* static forward current transfer BCW65a bcw66f h fe 35 75 100 35 160 250 i c =100 m a, v ce =10v i c = 10ma, v ce = 1v i c =100ma, v ce = 1v* i c =500ma, v ce = 2v* BCW65b bcw66g h fe 50 110 160 60 250 400 i c =100 m a, v ce =10v i c = 10ma, v ce = 1v i c =100ma, v ce = 1v* i c =500ma, v ce = 2v* BCW65c bcw66h h fe 80 180 250 100 350 630 i c =100 m a, v ce =10v i c = 10ma, v ce = 1v i c =100ma, v ce = 1v* i c =500ma, v ce = 2v* transition frequency f t 100 mhz i c =20ma, v ce =10v f = 100mhz collector-base capacitance c cbo 8 12pfv cbo =10v, f =1mhz emitter-base capacitance c ebo 80 pf v ebo =0.5v, f =1mhz noise figure n 2 10 db i c = 0.2ma, v ce = 5v r g =1k w switching times: turn-on time turn-off time t on t off 100 400 ns ns i c =150ma i b1 =- i b2 =15ma r l =150 w spice parameter data is available upon request for this device *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% c b e sot23 BCW65 bcw66 3 - 28 3 - 27
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